Developments of the physical and electrical properties of NiCr and NiCrSi single-layer and bi-layer nano-scale thin-film resistors

Huan Yi Cheng, Ying Chung Chen, Chi Lun Li, Pei Jou Li, Mau Phon Houng, Cheng Fu Yang

研究成果: Article

2 引文 (Scopus)

摘要

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

原文English
文章編號39
期刊Nanomaterials
6
發行號3
DOIs
出版狀態Published - 2016 三月 1

指紋

Resistors
Electric properties
Physical properties
Thin films
Diffraction patterns
Sputtering
Microscopes
Deposits
Crystalline materials
Scanning
X ray diffraction
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)

引用此文

Cheng, Huan Yi ; Chen, Ying Chung ; Li, Chi Lun ; Li, Pei Jou ; Houng, Mau Phon ; Yang, Cheng Fu. / Developments of the physical and electrical properties of NiCr and NiCrSi single-layer and bi-layer nano-scale thin-film resistors. 於: Nanomaterials. 2016 ; 卷 6, 編號 3.
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abstract = "In this study, commercial-grade NiCr (80 wt {\%} Ni, 20 wt {\%} Cr) and NiCrSi (55 wt {\%} Ni, 40 wt {\%} Cr, 5 wt {\%} Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.",
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Developments of the physical and electrical properties of NiCr and NiCrSi single-layer and bi-layer nano-scale thin-film resistors. / Cheng, Huan Yi; Chen, Ying Chung; Li, Chi Lun; Li, Pei Jou; Houng, Mau Phon; Yang, Cheng Fu.

於: Nanomaterials, 卷 6, 編號 3, 39, 01.03.2016.

研究成果: Article

TY - JOUR

T1 - Developments of the physical and electrical properties of NiCr and NiCrSi single-layer and bi-layer nano-scale thin-film resistors

AU - Cheng, Huan Yi

AU - Chen, Ying Chung

AU - Li, Chi Lun

AU - Li, Pei Jou

AU - Houng, Mau Phon

AU - Yang, Cheng Fu

PY - 2016/3/1

Y1 - 2016/3/1

N2 - In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

AB - In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

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