Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

Yao Jen Lee, Fu Ju Hou, Shang Shiun Chuang, Fu Kuo Hsueh, Kuo Hsing Kao, Po Jung Sung, Wei You Yuan, Jay Yi Yao, Yu Chi Lu, Kun Lin Lin, Chien Ting Wu, Hisu Chih Chen, Bo Yuan Chen, Guo Wei Huang, Henry J.H. Chen, Jiun Yun Li, Yiming Li, Seiji Samukawa, Tien Sheng Chao, Tseung Yuen TsengWen Fa Wu, Tuo Hung Hou, Wen Kuan Yeh

研究成果: Conference contribution

8 引文 斯高帕斯(Scopus)

摘要

We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge09Si01 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry etching process involves three isotropic/anisotropic etching steps with different Cl2/HBr ratios for forming the suspended diamond-shaped channel. Taking advantages of the GAA configuration, favorable carrier mobility of the {111} surface, nearly defect-free suspended channel, and improved dopant activation by incorporating Si, nFET and pFET with excellent performance have been demonstrated, including an Ion/Ioff ratio exceeding 108, the highest ever reported for Ge-based pFETs.

原文English
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面15.1.1-15.1.4
ISBN(電子)9781467398930
DOIs
出版狀態Published - 2015 二月 16
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
持續時間: 2015 十二月 72015 十二月 9

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
國家United States
城市Washington
期間15-12-0715-12-09

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology」主題。共同形成了獨特的指紋。

引用此