Dielectric response of directly using terahertz (THz) spectroscopy. In the preparation of the ceramic materials, the two-step process exhibits a marked advantage over the one-step process in that the ceramic material's characteristics are relatively insensitive to the sintering parameters. The ceramic materials can achieve high density (7.2 g/cm3), large dielectric constant (K = 67), high quality factor (Q xf≅80,000 GHz) and small temperature coefficient of resonance frequency (rf ≅ -6 ppm/°C), when processed at optimized sintering temperature (1050°C, 4 h). Crystalline BiZN thin films, can be easily obtained when the films were in-situ deposited at high enough substrate temperature 450-600°C (30 min). The dielectric constant of BiZN thin films in THz frequency regime, (ε′)f·THz = 32, is markedly smaller than the (ε′)b·THz value of BiZN bulk materials, and the quality factor of the thin films is less than 20% of the bulk materials.
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