TY - JOUR
T1 - Different ligand exchange solvents effect on the densification of CuIn 0.7 Ga 0.3 Se 2 prepared using the heating-up method
AU - Yang, Chang Ting
AU - Hsiang, Hsing I.
N1 - Publisher Copyright:
© 2017 Elsevier B.V.
PY - 2017/12/31
Y1 - 2017/12/31
N2 - The effects of different ligand exchange solvents and heat treatment conditions on the densification and microstructure development of CuIn 0.7 Ga 0.3 Se 2 (CIGS) crystallites synthesized using the heating-up method were studied in this work. The heat treatment effects on the organic molecules and crystalline structure were investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was observed that oleylamine (OLA) adsorbed onto the CIGS surface was difficult to remove during sintering. Ligand-exchange with m-xylene or 1-hexanethiol can promote the removal of oleylamine adsorbed onto the CIGS surface and prevent the residual carbon from forming during sintering, which leads to grain growth and densification. A dense CuIn 0.7 Ga 0.3 Se 2 can be obtained using the precursor powders after ligand-exchange with 1-hexanethiol and m-xylene to remove organic molecules and sintering at 600 °C for 2 h under Se atmosphere.
AB - The effects of different ligand exchange solvents and heat treatment conditions on the densification and microstructure development of CuIn 0.7 Ga 0.3 Se 2 (CIGS) crystallites synthesized using the heating-up method were studied in this work. The heat treatment effects on the organic molecules and crystalline structure were investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was observed that oleylamine (OLA) adsorbed onto the CIGS surface was difficult to remove during sintering. Ligand-exchange with m-xylene or 1-hexanethiol can promote the removal of oleylamine adsorbed onto the CIGS surface and prevent the residual carbon from forming during sintering, which leads to grain growth and densification. A dense CuIn 0.7 Ga 0.3 Se 2 can be obtained using the precursor powders after ligand-exchange with 1-hexanethiol and m-xylene to remove organic molecules and sintering at 600 °C for 2 h under Se atmosphere.
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U2 - 10.1016/j.apsusc.2017.07.273
DO - 10.1016/j.apsusc.2017.07.273
M3 - Article
AN - SCOPUS:85026886098
SN - 0169-4332
VL - 426
SP - 1148
EP - 1157
JO - Applied Surface Science
JF - Applied Surface Science
ER -