Dimer-flipping-assisted diffusion on a Si(001) surface

J. Zi; B. J. Min; Y. Lu; C. Z. Wang; K. M. Ho

doi:10.1063/1.1336167

Dimer-flipping-assisted diffusion on a Si(001) surface

J. Zi, B. J. Min, Y. Lu, C. Z. Wang, K. M. Ho

物理學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

原文	English
頁（從 - 到）	4184-4186
頁數	3
期刊	Applied Physics Letters
卷	77
發行號	25
DOIs	https://doi.org/10.1063/1.1336167
出版狀態	Published - 2000 12月 18

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.1336167

其它文件與鏈接

引用此

@article{794ed8b74a7043fbad33b1c9b6033513,

title = "Dimer-flipping-assisted diffusion on a Si(001) surface",

abstract = "The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.",

author = "J. Zi and Min, \{B. J.\} and Y. Lu and Wang, \{C. Z.\} and Ho, \{K. M.\}",

year = "2000",

month = dec,

day = "18",

doi = "10.1063/1.1336167",

language = "English",

volume = "77",

pages = "4184--4186",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Dimer-flipping-assisted diffusion on a Si(001) surface

AU - Zi, J.

AU - Min, B. J.

AU - Lu, Y.

AU - Wang, C. Z.

AU - Ho, K. M.

PY - 2000/12/18

Y1 - 2000/12/18

N2 - The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

AB - The binding sites and diffusion pathways of Si adatoms on a c(4X2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along the trough edge driven by dimer flipping is found with a barrier of 0.74 eV, comparable to that of 0.68 eV along the top of the dimer rows.

UR - https://www.scopus.com/pages/publications/0347561713

UR - https://www.scopus.com/inward/citedby.url?scp=0347561713&partnerID=8YFLogxK

U2 - 10.1063/1.1336167

DO - 10.1063/1.1336167

M3 - Article

AN - SCOPUS:0347561713

SN - 0003-6951

VL - 77

SP - 4184

EP - 4186

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Dimer-flipping-assisted diffusion on a Si(001) surface

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此