Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Richard Dorrance, Juan G. Alzate, Sergiy S. Cherepov, Pramey Upadhyaya, Ilya N. Krivorotov, Jordan A. Katine, Juergen Langer, Kang L. Wang, Pedram Khalili Amiri, Dejan Marković

研究成果: Article同行評審

32 引文 斯高帕斯(Scopus)

摘要

This letter presents a diode-magnetic tunnel junction (MTJ) magnetic random access memory cell in a 65-nm complimentary metal-oxide-semiconductor compatible process. A voltage-controlled magnetic anisotropy switching mechanism, in addition to STT, allows for a unipolar set/reset write scheme, where voltage pulses of the same polarity, but different amplitudes, are used to switch the MTJs. A small crossbar array is constructed from 65-nm MTJs fabricated on a silicon wafer, with switching voltages ∼ 1V and thermal stability greater than 10 years, with discrete germanium diodes as access devices to allow for read/write operations. The crossbar architecture can be extended to multiple layers to create a 3-D stackable, nonvolatile memory with a sub-1F2 effective cell size.

原文English
文章編號6513288
頁(從 - 到)753-755
頁數3
期刊IEEE Electron Device Letters
34
發行號6
DOIs
出版狀態Published - 2013

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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