Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM

Richard Dorrance, Juan G. Alzate, Sergiy S. Cherepov, Pramey Upadhyaya, Ilya N. Krivorotov, Jordan A. Katine, Juergen Langer, Kang L. Wang, Pedram Khalili Amiri, Dejan Marković

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32 引文 斯高帕斯(Scopus)

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Engineering & Materials Science

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