Direct alpha Ta formation on TaN by resputtering for low resistive diffusion barriers

Physics & Astronomy

• argon 26%
• Auger spectroscopy 33%
• bombardment 31%
• bypasses 41%
• causes 20%
• diffraction 18%
• electrical resistivity 42%
• electron spectroscopy 32%
• ions 15%
• metals 17%
• nitrogen 24%
• performance 14%
• profiles 18%
• sputtering 26%
• surface layers 29%
• surface treatment 71%
• x rays 15%

Engineering & Materials Science

• Argon 38%
• Auger electron spectroscopy 52%
• Diffusion barriers 100%
• Ion bombardment 54%
• Lattice constants 50%
• Metals 21%
• Sputtering 43%
• Surface treatment 71%
• X ray diffraction 33%

Chemical Compounds

• Alpha Phase 53%
• Auger Electron Spectroscopy 25%
• Beta Phase 26%
• Body-Centered Cubic Crystal System 27%
• Cubic Space Group 18%
• Dielectric Material 19%
• Diffusion Barrier 85%
• Ion Bombardment 29%
• Lattice Constant 25%
• Metal 10%
• Nitrogen 13%
• Reaction Yield 9%
• Sputtering 24%
• Surface 21%
• Tetragonal Space Group 20%
• Time 8%
• X-Ray Diffraction 11%