Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: From controllable growth to material characterization

Wen Chun Yen, Yu Ze Chen, Chao Hui Yeh, Jr Hau He, Po Wen Chiu, Yu Lun Chueh

研究成果: Article同行評審

51 引文 斯高帕斯(Scopus)

摘要

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100°C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ∼12a €...nm at growth temperature of 1000°C to ∼32a €...nm at growth temperature of 1100°C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

原文English
文章編號4739
期刊Scientific reports
4
DOIs
出版狀態Published - 2014 5月 9

All Science Journal Classification (ASJC) codes

  • 多學科

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