Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy

Zuoming Zhao, Kameshwar Yadavalli, Zhibiao Hao, Kang L. Wang

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

Direct integration of III-V compound semiconductor (GaAs) on silicon (Si) substrates has been demonstrated using selective epitaxy on patterned substrates. GaAs was grown directly on patterned (001), (011), and (111) Si substrates covered with 60 nm thick thermally grown SiO2. After growth, GaAs crystals with both dot and wire shapes show preferred {011} facets. GaAs grown on particular wire patterns which are parallel to {011} surfaces shows uniform nanowire structure. Transmission electron microscopy shows dislocation-free GaAs with low density of anti-phase domain boundaries along [111] directions. Metal-oxide-semiconductor structures with aluminum oxide as gate dielectric were fabricated using GaAs nanowires on Si. Capacitance-voltage measurements show clear inversion and accumulation.

原文English
文章編號035304
期刊Nanotechnology
20
發行號3
DOIs
出版狀態Published - 2009 一月 21

All Science Journal Classification (ASJC) codes

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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