Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Y. S. Tang; S. J. Cai; G. L. Jin; K. L. Wang; H. M. Soyez; B. S. Dunn

doi:10.1016/S0040-6090(98)00447-7

Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

Y. S. Tang, S. J. Cai, G. L. Jin, K. L. Wang, H. M. Soyez, B. S. Dunn

電機資訊學院

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

原文	English
頁（從 - 到）	76-80
頁數	5
期刊	Thin Solid Films
卷	321
發行號	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00447-7
出版狀態	Published - 1998 5月 26

All Science Journal Classification (ASJC) codes

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/S0040-6090(98)00447-7

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title = "Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate",

abstract = "In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.",

author = "Tang, {Y. S.} and Cai, {S. J.} and Jin, {G. L.} and Wang, {K. L.} and Soyez, {H. M.} and Dunn, {B. S.}",

note = "Funding Information: This work was in part supported by SRC, NSF and ARO MURI (low power electronics) programs.",

year = "1998",

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doi = "10.1016/S0040-6090(98)00447-7",

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T1 - Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

AU - Tang, Y. S.

AU - Cai, S. J.

AU - Jin, G. L.

AU - Wang, K. L.

AU - Soyez, H. M.

AU - Dunn, B. S.

N1 - Funding Information: This work was in part supported by SRC, NSF and ARO MURI (low power electronics) programs.

PY - 1998/5/26

Y1 - 1998/5/26

N2 - In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

AB - In this paper, we propose a new method for preparing high-density nanometer-scale SiGe quantum dots on ordered mesoporous sol gel silica-coated Si substrate. It was found that a SiGe dot matrix has formed in the porous silica media, and a second layer of bigger overgrown SiGe dots was also observable. X-Ray diffraction measurements suggest the formation of the buried dots. Preliminary photoluminescence experiments show promising emission related to the buried dots.

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SN - 0040-6090

VL - 321

SP - 76

EP - 80

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Direct MBE growth of SiGe dots on ordered mesoporous glass-coated Si substrate

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