Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das, S. Dhara, Yeau Ren Jeng, Ping Chi Tsai, H. C. Hsu, Baldev Raj, A. K. Bhaduri, S. K. Albert, A. K. Tyagi, L. C. Chen, K. H. Chen

研究成果: Article

18 引文 斯高帕斯(Scopus)

摘要

Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

原文English
文章編號253113
期刊Applied Physics Letters
96
發行號25
DOIs
出版狀態Published - 2010 六月 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Das, C. R., Dhara, S., Jeng, Y. R., Tsai, P. C., Hsu, H. C., Raj, B., Bhaduri, A. K., Albert, S. K., Tyagi, A. K., Chen, L. C., & Chen, K. H. (2010). Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Applied Physics Letters, 96(25), [253113]. https://doi.org/10.1063/1.3456380