Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das; S. Dhara; Yeau Ren Jeng; Ping Chi Tsai; H. C. Hsu; Baldev Raj; A. K. Bhaduri; S. K. Albert; A. K. Tyagi; L. C. Chen; K. H. Chen

doi:10.1063/1.3456380

Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

C. R. Das, S. Dhara, Yeau Ren Jeng, Ping Chi Tsai, H. C. Hsu, Baldev Raj, A. K. Bhaduri, S. K. Albert, A. K. Tyagi, L. C. Chen, K. H. Chen

研究成果: Article

18 引文斯高帕斯（Scopus）

摘要

Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

原文	English
文章編號	253113
期刊	Applied Physics Letters
卷	96
發行號	25
DOIs	https://doi.org/10.1063/1.3456380
出版狀態	Published - 2010 六月 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

存取文件

10.1063/1.3456380

指紋深入研究「Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si」主題。共同形成了獨特的指紋。

引用此

Das, C. R., Dhara, S., Jeng, Y. R., Tsai, P. C., Hsu, H. C., Raj, B., Bhaduri, A. K., Albert, S. K., Tyagi, A. K., Chen, L. C., & Chen, K. H. (2010). Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si. Applied Physics Letters, 96(25), [253113]. https://doi.org/10.1063/1.3456380

@article{60f2084f01db47858f5278fae21de8fc,

title = "Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si",

abstract = "Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.",

author = "Das, {C. R.} and S. Dhara and Jeng, {Yeau Ren} and Tsai, {Ping Chi} and Hsu, {H. C.} and Baldev Raj and Bhaduri, {A. K.} and Albert, {S. K.} and Tyagi, {A. K.} and Chen, {L. C.} and Chen, {K. H.}",

year = "2010",

month = jun,

day = "21",

doi = "10.1063/1.3456380",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "25",

}

TY - JOUR

T1 - Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si

AU - Das, C. R.

AU - Dhara, S.

AU - Jeng, Yeau Ren

AU - Tsai, Ping Chi

AU - Hsu, H. C.

AU - Raj, Baldev

AU - Bhaduri, A. K.

AU - Albert, S. K.

AU - Tyagi, A. K.

AU - Chen, L. C.

AU - Chen, K. H.

PY - 2010/6/21

Y1 - 2010/6/21

N2 - Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

AB - Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.

UR - http://www.scopus.com/inward/record.url?scp=77954076150&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954076150&partnerID=8YFLogxK

U2 - 10.1063/1.3456380

DO - 10.1063/1.3456380

M3 - Article

AN - SCOPUS:77954076150

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253113

ER -