摘要
Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-) Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load. Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.
原文 | English |
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文章編號 | 253113 |
期刊 | Applied Physics Letters |
卷 | 96 |
發行號 | 25 |
DOIs | |
出版狀態 | Published - 2010 6月 21 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)