Directly patterning ferroelectric films by nanoimprint lithography with low temperature and low pressure

K. C. Hsieh, H. L. Chen, C. H. Lin, C. Y. Lee

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

In this article, the authors demonstrate an imprint method for patterning ferroelectric films. In contrast to conventional nanoimprint lithography, the patterned mold is directly imprinted in a ferroelectric film or a metal/ferroelectric film bilayer structure. In general, direct imprint in a ferroelectric or metal film needs ultrahigh pressure or temperature to form patterns. In this article, the authors improve the direct imprint processes by using a sharp mold and an underlying soft gel film for the reduction of the imprint pressure and temperature. The imprint pressure can be reduced to be compatible with the conventional nanoimprint instrument. The authors also successfully use the metal/ferroelectric bilayer structure to overcome the pattern flattened problem in a gel film. The cover metal layer can also be the upper conductive layer in the ferroelectric application. For direct contact of the metal film with mold, no surfactant should be coated on the surface of mold. It also indicates that no mold-rework processes are necessary for this direct imprint ferroelectric film method.

原文English
頁(從 - 到)3234-3238
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
24
發行號6
DOIs
出版狀態Published - 2006

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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