Discrete impurity dopant fluctuation in multi-fin FinFFTs: 3D simulation-based study

Jeng Nan Lin, Kuo Chih Chan, Chin Yu Chen, Meng-Hsueh Chiang

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

This paper presents the assessment of the random dopant fluctuation effects in FinFET technologies with multi-fin configurations. The impact of the discrete dopant effects on advanced device structures having nearly "undoped" channels is investigated via physical analyses and numerical simulations. Our results suggest that both donor and acceptor atoms in the channel can cause a significant impact on device characteristics. Similar discrete dopant effects are observed in the double-gate, FinFET, and triple-gate devices. For applications using multi fins, the discrete dopant effects are shown to be less of concern. Physical insight into FinFET device scaling is discussed as well.

原文English
主出版物標題IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
頁面577-580
頁數4
DOIs
出版狀態Published - 2007 十二月 1
事件IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
持續時間: 2007 十二月 202007 十二月 22

出版系列

名字IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Other

OtherIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
國家/地區Taiwan
城市Tainan
期間07-12-2007-12-22

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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