Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

K. H. Lee, P. C. Chang, Shoou-Jinn Chang, Y. K. Su, Y. C. Wang, C. L. Yu, C. H. Kuo

研究成果: Article

摘要

We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

原文English
頁(從 - 到)2839-2842
頁數4
期刊Thin Solid Films
518
發行號10
DOIs
出版狀態Published - 2010 三月 1

指紋

Schottky diodes
Nitrides
nitrides
Diodes
Nucleation
nucleation
Dislocations (crystals)
Surface states
Leakage currents
insertion
Photoluminescence
leakage
photoluminescence
X ray diffraction
Temperature
Crystals
diffraction
crystals
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

Lee, K. H. ; Chang, P. C. ; Chang, Shoou-Jinn ; Su, Y. K. ; Wang, Y. C. ; Yu, C. L. ; Kuo, C. H. / Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers. 於: Thin Solid Films. 2010 ; 卷 518, 編號 10. 頁 2839-2842.
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Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers. / Lee, K. H.; Chang, P. C.; Chang, Shoou-Jinn; Su, Y. K.; Wang, Y. C.; Yu, C. L.; Kuo, C. H.

於: Thin Solid Films, 卷 518, 編號 10, 01.03.2010, p. 2839-2842.

研究成果: Article

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AU - Lee, K. H.

AU - Chang, P. C.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Wang, Y. C.

AU - Yu, C. L.

AU - Kuo, C. H.

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N2 - We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

AB - We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

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