Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

K. H. Lee, P. C. Chang, Shoou-Jinn Chang, Y. K. Su, Y. C. Wang, C. L. Yu, C. H. Kuo

研究成果: Article同行評審

指紋

深入研究「Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds