Diverse Properties of Carbon-Substituted Silicenes

Hai Duong Pham, Shih Yang Lin, Godfrey Gumbs, Nguyen Duy Khanh, Ming Fa Lin

研究成果: Article同行評審

摘要

The theoretical framework, which is built from the first-principles results, is successfully developed for investigating emergent two-dimensional materials, as it is clearly illustrated by carbon substitution in silicene. By the delicate VASP calculations and analyses, the multi-orbital hybridizations are thoroughly identified from the optimal honeycomb lattices, the atom-dominated energy spectra, the spatial charge density distributions, and the atom and orbital-decomposed van Hove singularities, being very sensitive to the concentration and arrangements of guest atoms. All the binary two-dimensional silicon-carbon compounds belong to the finite- or zero-gap semiconductors, corresponding to the thoroughly/strongly/slightly modified Dirac-cone structures near the Fermi level. Additionally, there are frequent π and σ band crossings, but less anti-crossing behaviors. Apparently, our results indicate the well-defined π and σ bondings.

原文English
文章編號561350
期刊Frontiers in Physics
8
DOIs
出版狀態Published - 2020 十二月 16

All Science Journal Classification (ASJC) codes

  • 生物物理學
  • 材料科學(雜項)
  • 數學物理學
  • 物理與天文學 (全部)
  • 物理與理論化學

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