Diverse resistive switching behaviors of AlN thin films with different orientations

Chun Cheng Lin, Huei Yu Liou, Sheng Yuan Chu, Chih Yu Huang, Cheng Shong Hong

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method. Among the three films, the amorphous AlN film is found to provide both the lowest leakage current (2.6 × 10-11 A) and the largest memory window size (3.1 × 106). Moreover, the observation results suggest that the thermal activation energy has a greater effect on the conduction behavior of the Ag/AlN/Pt structures than the microstructure, surface morphology, or chemical bonds.

原文English
頁(從 - 到)6230-6235
頁數6
期刊CrystEngComm
20
發行號40
DOIs
出版狀態Published - 2018

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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