Dominant photogenerated valley current in a double-barrier resonant-tunneling diode

H. S. Li, L. P. Chen, Y. W. Chen, K. L. Wang, D. S. Pan, J. M. Liu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Dominant photogenerated valley current has been observed in an optically-excited InGaAs/AlAs double-barrier resonant-tunneling diode. The photogenerated valley current in the resonant-tunneling diode varies with the optical power level. Under intense illumination, the photogenerated valley current increases to such a high level that it becomes dominant over the peak current. As a consequence, the negative differential resistance of the device is removed. The observed photogenerated valley current is described by photogenerating electron-hole pairs in the depletion region adjacent to the double-barrier structure. Transient behavior of the photogenerated carriers is also studied. The observed dominant photogenerated valley current may have useful applications.

原文English
頁(從 - 到)2999-3001
頁數3
期刊Applied Physics Letters
65
發行號23
DOIs
出版狀態Published - 1994

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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