Doping effects on intersubband and interband optical transitions in GaSb-InAs superlattices

S. M. Chen, Y. K. Su, Y. T. Lu

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

Normal incidence intersubband and interband absorptions of a novel type II GaSb-InAs superlattices can be obtained by utilizing the various doped-type cap and buffer layers. Moreover, the types and intensities of the absorptions could also be modulated by changing doping concentration. The intersubband transition can occur due to the strong mixing of the heavy-hole band and the light-hole band for InAs n-type cap and buffer layers. But the interband transition is a result of coupling between the wave-functions of the first conduction subband and the first heavy-hole subband for GaSb p-type cap and buffer layers. Both the intensities of intersubband can be modulated by changing doping concentration, and the corresponding wavelengths are in the ranges of 3-5 μm and 8-14 μm, respectively, Hence, it shows the potential application as an infrared photodetector.

原文English
頁(從 - 到)277-282
頁數6
期刊IEEE Journal of Quantum Electronics
32
發行號2
DOIs
出版狀態Published - 1996 二月 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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