Doping effects on the dielectric properties of low temperature sintered lead-based ceramics

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

Doping effects on the dielectric properties of low temperature sintered lead-based ceramics were studied. PZT-based and 0.25Pb(Ni1/3Nb2/3)O3-0.75Pb(Zr0.52Ti0.48)O3 (PNN-PZT)-based ceramics, modified with Bi2O3, Fe2O3, CuO, MnO2, and Ba(Cu0.5W0.5)O3, were prepared by conventional mixed-oxide technique, with sintering temperature at 850-950 °C. Microstructural and compositional analyses of these low temperature sintered lead-based ceramics were carried out using X-ray diffraction (XRD) and scanning electron microscopy (SEM). In this paper, we successfully show that these additives were helpful in both lowering the sintering temperature and improving the dielectric properties. The preferred sintering condition is also reported. The following dielectric properties were obtained: εT 330 = 900, tan δ<10×10-3, ρ = 7.5 g/cm3 for the PZT-based family; εT 330 = 4000, tan δ = 35×10-4, ρ = 7.82 g/cm3 for the (PNN-PZT)-based family.

原文English
頁(從 - 到)1067-1076
頁數10
期刊Materials Research Bulletin
35
發行號7
DOIs
出版狀態Published - 2000 一月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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