Double Nitrogenation Layer Formed Using Nitric Oxide for Enhancing Li+ Storage Performance, Cycling Stability, and Safety of Si Electrodes

Rahmandhika Firdauzha Hary Hernandha, Bharath Umesh, Jagabandhu Patra, Chung Jen Tseng, Chien Te Hsieh, Ju Li, Jeng Kuei Chang

研究成果: Article同行評審

摘要

To enhance Li storage properties, nitrogenation methods are developed for Si anodes. First, melamine, urea, and nitric oxide (NO) precursors are used to nitrogenize carbon-coated Si particles. The properties of the obtained particles are compared. It is found that the NO process can maximize the graphitic nitrogen (N) content and electronic conductivity of a sample. In addition, optimized N functional groups and O─C species on the electrode surface increase electrolyte wettability. However, with a carbon barrier layer, NO hardly nitrogenizes the Si cores. Therefore, bare Si particles are reacted with NO. Core-shell Si@amorphous SiNx particles are produced using a facile and scalable NO treatment route. The effects of the NO reaction time on the physicochemical properties and charge–discharge performance of the obtained materials are systematically examined. Finally, the Si@SiNx particles are coated with N-doped carbon. Superior capacities of 2435 and 1280 mAh g−1 are achieved at 0.2 and 5 A g−1, respectively. After 300 cycles, 90% of the initial capacity is retained. In addition, differential scanning calorimetry data indicate that the multiple nitrogenation layers formed by NO significantly suppress electrode exothermic reactions during thermal runaway.

原文English
期刊Advanced Science
DOIs
出版狀態Accepted/In press - 2024

All Science Journal Classification (ASJC) codes

  • 醫藥(雜項)
  • 一般化學工程
  • 一般材料科學
  • 生物化學、遺傳與分子生物學(雜項)
  • 一般工程
  • 一般物理與天文學

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