Double superstructures in InGaN/GaN nano-pyramid arrays

Chiao Yun Chang, Heng Li, Kuo Bin Hong, Ya Yu Yang, Wei Chih Lai, Tien Chang Lu

研究成果: Article

1 引文 (Scopus)

摘要

We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.

原文English
頁(從 - 到)275-279
頁數5
期刊Superlattices and Microstructures
86
DOIs
出版狀態Published - 2015 八月 11

指紋

pyramids
Semiconductor quantum wells
Stark effect
Indium
Quantum confinement
Aluminum Oxide
Light emission
quantum wells
Sapphire
Light emitting diodes
pulling
Microscopic examination
light emission
indium
flat surfaces
Wavelength
transmittance
sapphire
light emitting diodes
microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

引用此文

Chang, Chiao Yun ; Li, Heng ; Hong, Kuo Bin ; Yang, Ya Yu ; Lai, Wei Chih ; Lu, Tien Chang. / Double superstructures in InGaN/GaN nano-pyramid arrays. 於: Superlattices and Microstructures. 2015 ; 卷 86. 頁 275-279.
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abstract = "We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.",
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Double superstructures in InGaN/GaN nano-pyramid arrays. / Chang, Chiao Yun; Li, Heng; Hong, Kuo Bin; Yang, Ya Yu; Lai, Wei Chih; Lu, Tien Chang.

於: Superlattices and Microstructures, 卷 86, 11.08.2015, p. 275-279.

研究成果: Article

TY - JOUR

T1 - Double superstructures in InGaN/GaN nano-pyramid arrays

AU - Chang, Chiao Yun

AU - Li, Heng

AU - Hong, Kuo Bin

AU - Yang, Ya Yu

AU - Lai, Wei Chih

AU - Lu, Tien Chang

PY - 2015/8/11

Y1 - 2015/8/11

N2 - We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.

AB - We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.

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