Double superstructures in InGaN/GaN nano-pyramid arrays

Chiao Yun Chang, Heng Li, Kuo Bin Hong, Ya Yu Yang, Wei Chih Lai, Tien Chang Lu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have fabricated and investigated InGaN/GaN nanopyramid arrays grown on c-plane sapphire by selective area growth technique. The double InGaN/GaN superstructures were formed in one GaN pyramid observed in transmittance emission microscopy. The two growth faces on GaN nanopyramind showed different growth rates, resulted in double superheterostructures of semi-polar facets for InGaN/GaN multiple quantum wells (MQWs) and c-plane InGaN/GaN nano-hetero-disk (NHD) under the nanoscale growth condition. The c-plane InGaN/GaN NHD had high Indium composition due to the pulling effect, exhibiting double wavelength emissions from GaN nanopyramid. And InGaN/GaN MQWs and c-plane InGaN/GaN NHD showed extremely low quantum confinement Stark effect, yielding great light emission efficiency. This result is beneficial for the development of blue, green and white light-emitting diodes.

原文English
頁(從 - 到)275-279
頁數5
期刊Superlattices and Microstructures
86
DOIs
出版狀態Published - 2015 八月 11

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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