Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching Sung Lee; Wei Chou Hsu

doi:10.1063/1.1738512

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

Ching Sung Lee
, Wei Chou Hsu

微電子工程研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at V_DS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In_0.28Ga_0.72As layer acted as the smoothing layer of the superlattice spacer.

原文	English
頁（從 - 到）	3618-3620
頁數	3
期刊	Applied Physics Letters
卷	84
發行號	18
DOIs	https://doi.org/10.1063/1.1738512
出版狀態	Published - 2004 5月 3

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

存取文件

10.1063/1.1738512

其它文件與鏈接

引用此

@article{2ccb3e7deb5446abb53f3a04f8566846,

title = "Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor",

abstract = "Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 {\AA} In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.",

author = "Lee, \{Ching Sung\} and Hsu, \{Wei Chou\}",

year = "2004",

month = may,

day = "3",

doi = "10.1063/1.1738512",

language = "English",

volume = "84",

pages = "3618--3620",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "18",

}

TY - JOUR

T1 - Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

PY - 2004/5/3

Y1 - 2004/5/3

N2 - Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.

AB - Double-transductance-plateau characteristics in a δ-doped InGaAs/GaAs high-electron-mobility transistors (HEMT) was investigated. It was observed that gate bias decreased from 0 to -2.5 V with -0.5 V per step. It was found that at VDS, the maximum drain current density was 382 mA/mm. It was also observed that the 20 Å In0.28Ga0.72As layer acted as the smoothing layer of the superlattice spacer.

UR - https://www.scopus.com/pages/publications/2542444508

UR - https://www.scopus.com/pages/publications/2542444508#tab=citedBy

U2 - 10.1063/1.1738512

DO - 10.1063/1.1738512

M3 - Article

AN - SCOPUS:2542444508

SN - 0003-6951

VL - 84

SP - 3618

EP - 3620

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此