Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms

Ching Chen Yeh; Thi Hien Do; Pin Chi Liao; Chia Hung Hsu; Yi Hsin Tu; Hsin Lin; T. R. Chang; Siang Chi Wang; Yu Yao Gao; Yu Hsun Wu; Chu Chun Wu; Yu An Lai; Ivar Martin; Sheng Di Lin; Christos Panagopoulos; Chi Te Liang

doi:10.1103/PhysRevMaterials.7.114801

Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms

Ching Chen Yeh, Thi Hien Do, Pin Chi Liao, Chia Hung Hsu, Yi Hsin Tu, Hsin Lin, T. R. Chang, Siang Chi Wang, Yu Yao Gao, Yu Hsun Wu, Chu Chun Wu, Yu An Lai, Ivar Martin, Sheng Di Lin, Christos Panagopoulos, Chi Te Liang

物理學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions.

原文	English
文章編號	114801
期刊	Physical Review Materials
卷	7
發行號	11
DOIs	https://doi.org/10.1103/PhysRevMaterials.7.114801
出版狀態	Published - 2023 11月

All Science Journal Classification (ASJC) codes

一般材料科學
物理與天文學（雜項）

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10.1103/PhysRevMaterials.7.114801

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Yeh, C. C., Do, T. H., Liao, P. C., Hsu, C. H., Tu, Y. H., Lin, H., Chang, T. R., Wang, S. C., Gao, Y. Y., Wu, Y. H., Wu, C. C., Lai, Y. A., Martin, I., Lin, S. D., Panagopoulos, C., & Liang, C. T. (2023). Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms. Physical Review Materials, 7(11), 文章 114801. https://doi.org/10.1103/PhysRevMaterials.7.114801

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title = "Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms",

abstract = "We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions.",

author = "Yeh, {Ching Chen} and Do, {Thi Hien} and Liao, {Pin Chi} and Hsu, {Chia Hung} and Tu, {Yi Hsin} and Hsin Lin and Chang, {T. R.} and Wang, {Siang Chi} and Gao, {Yu Yao} and Wu, {Yu Hsun} and Wu, {Chu Chun} and Lai, {Yu An} and Ivar Martin and Lin, {Sheng Di} and Christos Panagopoulos and Liang, {Chi Te}",

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month = nov,

doi = "10.1103/PhysRevMaterials.7.114801",

language = "English",

volume = "7",

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AU - Yeh, Ching Chen

AU - Do, Thi Hien

AU - Liao, Pin Chi

AU - Hsu, Chia Hung

AU - Tu, Yi Hsin

AU - Lin, Hsin

AU - Chang, T. R.

AU - Wang, Siang Chi

AU - Gao, Yu Yao

AU - Wu, Yu Hsun

AU - Wu, Chu Chun

AU - Lai, Yu An

AU - Martin, Ivar

AU - Lin, Sheng Di

AU - Panagopoulos, Christos

AU - Liang, Chi Te

PY - 2023/11

Y1 - 2023/11

N2 - We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions.

AB - We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions.

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JF - Physical Review Materials

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ER -

Doubling the superconducting transition temperature of ultraclean wafer-scale aluminum nanofilms

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