Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter

W. J. Lee, Y. K. Fang, H. C. Chiang, S. F. Ting, S. F. Chen, W. R. Chang, Yu-Cheng Lin, T. Y. Lin, J. J. Ho

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

In this letter, output luminance, current efficiency and power efficiency of the organic light emitting diodes (OLEDs) with N2 doped hole transport layer (HTL) have been studied in detail. Experimental results show that the current efficiency and the power efficiency thus in turn the output luminance of OLEDs prepared with HTL evaporated in the optimum N2 gas ambient pressure of 1 × 10-4 Torr are improved about 13, 9 and 12 times, respectively, under 2.7 mA/cm2 driving current. The significant improving mechanism has been illustrated comprehensively with a series of schematic models.

原文English
頁(從 - 到)1127-1130
頁數4
期刊Solid-State Electronics
47
發行號6
DOIs
出版狀態Published - 2003 六月 1
對外發佈

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料
  • 凝聚態物理學

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