Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel, D. Dobuzinsky, J. Gambino, K. P. Muller, F. Wang, D. C. Perng, H. Palm

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

原文English
頁(從 - 到)59-65
頁數7
期刊Microelectronic Engineering
37-38
DOIs
出版狀態Published - 1997 11月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電氣與電子工程

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