Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel; D. Dobuzinsky; J. Gambino; K. P. Muller; F. Wang; D. C. Perng; H. Palm

doi:10.1016/S0167-9317(97)00094-4

Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel, D. Dobuzinsky, J. Gambino, K. P. Muller, F. Wang, D. C. Perng, H. Palm

研究成果: Article › 同行評審

15 引文斯高帕斯（Scopus）

摘要

This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O₂ flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

原文	English
頁（從 - 到）	59-65
頁數	7
期刊	Microelectronic Engineering
卷	37-38
DOIs	https://doi.org/10.1016/S0167-9317(97)00094-4
出版狀態	Published - 1997 11月

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

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10.1016/S0167-9317(97)00094-4

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@article{5efe707b7feb43639928a8018d7aea5d,

title = "Dry etch challenges of 0.25 μm dual damascene structures",

abstract = "This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.",

author = "Schnabel, {R. F.} and D. Dobuzinsky and J. Gambino and Muller, {K. P.} and F. Wang and Perng, {D. C.} and H. Palm",

year = "1997",

month = nov,

doi = "10.1016/S0167-9317(97)00094-4",

language = "English",

volume = "37-38",

pages = "59--65",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Dry etch challenges of 0.25 μm dual damascene structures

AU - Schnabel, R. F.

AU - Dobuzinsky, D.

AU - Gambino, J.

AU - Muller, K. P.

AU - Wang, F.

AU - Perng, D. C.

AU - Palm, H.

PY - 1997/11

Y1 - 1997/11

N2 - This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

AB - This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

UR - http://www.scopus.com/inward/record.url?scp=0031273810&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031273810&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(97)00094-4

DO - 10.1016/S0167-9317(97)00094-4

M3 - Article

AN - SCOPUS:0031273810

VL - 37-38

SP - 59

EP - 65

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Dry etch challenges of 0.25 μm dual damascene structures

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