摘要
This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.
原文 | English |
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頁(從 - 到) | 59-65 |
頁數 | 7 |
期刊 | Microelectronic Engineering |
卷 | 37-38 |
DOIs | |
出版狀態 | Published - 1997 11月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 原子與分子物理與光學
- 凝聚態物理學
- 表面、塗料和薄膜
- 電氣與電子工程