Dry etch challenges of 0.25 μm dual damascene structures

R. F. Schnabel, D. Dobuzinsky, J. Gambino, K. P. Muller, F. Wang, D. C. Perng, H. Palm

研究成果: Article

15 引文 斯高帕斯(Scopus)

摘要

This paper investigates the influence of etch process parameters on the geometry of dual damascene patterns. Etch residues and a via taper are found to depend strongly on antireflection coating (ARC) etch time and O2 flow. Furthermore, they have significant impact on the metal fill. ARC residues and polymer formation during the interconnect line etch are identified to be responsible for the observed features. Using an optimized etch a dual damascene process has been integrated into 0.25 μm three metal level structures.

原文English
頁(從 - 到)59-65
頁數7
期刊Microelectronic Engineering
37-38
DOIs
出版狀態Published - 1997 十一月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • 引用此

    Schnabel, R. F., Dobuzinsky, D., Gambino, J., Muller, K. P., Wang, F., Perng, D. C., & Palm, H. (1997). Dry etch challenges of 0.25 μm dual damascene structures. Microelectronic Engineering, 37-38, 59-65. https://doi.org/10.1016/S0167-9317(97)00094-4