Dual-band ultraviolet photodetectors comprising nanostructured MgZnO on ZnO films

Ching Ting Lee, Tzu Shun Lin, Hsin Ying Lee, Day Shan Liu

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

To extend the wavelength sensing limitation, dual-band ultraviolet photodetectors (UV-PDs) were studied. The ZnO/MgZnO dual-band UV-PDs were constructed by stacking MgZnO nanorods on ZnO films. The wide ultraviolet wavelength from 250 to 360 nm could be detected by the proposed dual-band UV-PDs. When a reverse bias voltage of -5 V was applied on the dual-band UV-PDs, the photoresponsivity at 310 and 360 nm was 196.0 and 0.70 A/W, respectively. The noise equivalent power at 310 and 360 nm was 9.81 × 10-15 W and 2.78 × 10-12 W, respectively. Furthermore, the specific detectivity at 310 and 360 nm was 9.67 × 1013 and 3.41 × 1011 cmHz0.5W-1, respectively.

原文English
文章編號061203
期刊Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
36
發行號6
DOIs
出版狀態Published - 2018 十一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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