Dual-phase virtual metrology scheme

研究成果: Article

60 引文 斯高帕斯(Scopus)

摘要

This paper proposes a dual-phase virtual metrology scheme. To consider both promptness and accuracy, this scheme generates dual-phase virtual metrology (VM) values. Phase I emphasizes promptness, that is to immediately calculate and output the Phase-I VM value (denoted ) of a workpiece (wafer or glass) once the entire process data of the workpiece are completely collected. Phase II improves accuracy, that is not to recalculate and output the Phase-II VM values (denoted) of all the workpieces in the cassette (also called FOUP in the semiconductor industry) until an actual metrology value (required for tuning or retraining purposes) of a workpiece in the same cassette is collected. Also, in this scheme, the accompanying reliance index (RI) and global similarity index (GSI) of each and are also generated. The RI and GSI are applied to gauge the degree of reliance. If the reliance level of a VM value is lower than the threshold, this VM value may not be adopted. An illustrative example involving fifth-generation thin-film transistor liquid crystal display (TFT-LCD) chemical-vapor deposition equipment is presented. Experimental results demonstrate that the proposed scheme is applicable to the wafer-to-wafer or glass-to-glass advanced process control for semiconductor or TFT-LCD factories.

原文English
文章編號4369327
頁(從 - 到)566-571
頁數6
期刊IEEE Transactions on Semiconductor Manufacturing
20
發行號4
DOIs
出版狀態Published - 2007 十一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

指紋 深入研究「Dual-phase virtual metrology scheme」主題。共同形成了獨特的指紋。

  • 引用此