Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Ming Lun Lee, Yu Hsiang Yeh, Shang Ju Tu, P. C. Chen, Ming Jui Wu, Wei Chih Lai, Jinn Kong Sheu

研究成果: Article

6 引文 (Scopus)

摘要

GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Siimplanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantationfree regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

原文English
頁(從 - 到)A864-A871
期刊Optics Express
21
發行號105
DOIs
出版狀態Published - 2013 九月 9

指紋

pyramids
light emitting diodes
templates
wavelengths
cathodoluminescence
electroluminescence
quantum wells
transmission electron microscopy
crystal structure

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

引用此文

Lee, Ming Lun ; Yeh, Yu Hsiang ; Tu, Shang Ju ; Chen, P. C. ; Wu, Ming Jui ; Lai, Wei Chih ; Sheu, Jinn Kong. / Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates. 於: Optics Express. 2013 ; 卷 21, 編號 105. 頁 A864-A871.
@article{8fbf69eb6d424d92bb6f33fea50b3fda,
title = "Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates",
abstract = "GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Siimplanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantationfree regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.",
author = "Lee, {Ming Lun} and Yeh, {Yu Hsiang} and Tu, {Shang Ju} and Chen, {P. C.} and Wu, {Ming Jui} and Lai, {Wei Chih} and Sheu, {Jinn Kong}",
year = "2013",
month = "9",
day = "9",
doi = "10.1364/OE.21.00A864",
language = "English",
volume = "21",
pages = "A864--A871",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "105",

}

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates. / Lee, Ming Lun; Yeh, Yu Hsiang; Tu, Shang Ju; Chen, P. C.; Wu, Ming Jui; Lai, Wei Chih; Sheu, Jinn Kong.

於: Optics Express, 卷 21, 編號 105, 09.09.2013, p. A864-A871.

研究成果: Article

TY - JOUR

T1 - Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

AU - Lee, Ming Lun

AU - Yeh, Yu Hsiang

AU - Tu, Shang Ju

AU - Chen, P. C.

AU - Wu, Ming Jui

AU - Lai, Wei Chih

AU - Sheu, Jinn Kong

PY - 2013/9/9

Y1 - 2013/9/9

N2 - GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Siimplanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantationfree regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

AB - GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Siimplanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantationfree regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

UR - http://www.scopus.com/inward/record.url?scp=84884571964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884571964&partnerID=8YFLogxK

U2 - 10.1364/OE.21.00A864

DO - 10.1364/OE.21.00A864

M3 - Article

C2 - 24104581

AN - SCOPUS:84884571964

VL - 21

SP - A864-A871

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 105

ER -