Dynamic turn-on mechanism of the n-MOSFET under high-current stress

Dao Hong Yang, Jone F. Chen, Jian Hsing Lee, Kuo Ming Wu

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.

原文English
頁(從 - 到)895-897
頁數3
期刊IEEE Electron Device Letters
29
發行號8
DOIs
出版狀態Published - 2008 8月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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