Dynamic turn-on mechanism of the n-MOSFET under high-current stress

Dao Hong Yang; Jone F. Chen; Jian Hsing Lee; Kuo Ming Wu

doi:10.1109/LED.2008.2000762

Dynamic turn-on mechanism of the n-MOSFET under high-current stress

Dao Hong Yang, Jone F. Chen, Jian Hsing Lee, Kuo Ming Wu

研究成果: Article › 同行評審

24 引文斯高帕斯（Scopus）

摘要

In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (I_D). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with I_D instead of 0.6-0.8 V and independent of I_D as reported in early literatures.

原文	English
頁（從 - 到）	895-897
頁數	3
期刊	IEEE Electron Device Letters
卷	29
發行號	8
DOIs	https://doi.org/10.1109/LED.2008.2000762
出版狀態	Published - 2008 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
電氣與電子工程

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10.1109/LED.2008.2000762

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title = "Dynamic turn-on mechanism of the n-MOSFET under high-current stress",

abstract = "In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of {"}self-consistent effect,{"} i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.",

author = "Yang, {Dao Hong} and Chen, {Jone F.} and Lee, {Jian Hsing} and Wu, {Kuo Ming}",

note = "Funding Information: Manuscript received March 5, 2008; revised April 28, 2008. This work was supported by TSMC. The review of this letter was arranged by Editor C. Bulucea.",

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AU - Yang, Dao Hong

AU - Chen, Jone F.

AU - Lee, Jian Hsing

AU - Wu, Kuo Ming

N1 - Funding Information: Manuscript received March 5, 2008; revised April 28, 2008. This work was supported by TSMC. The review of this letter was arranged by Editor C. Bulucea.

PY - 2008/8

Y1 - 2008/8

N2 - In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.

AB - In this letter, the dynamic turn-on mechanism of the n-MOSFET under high-current-stress event is investigated by using a real-time current and voltage measurement. Results reveal the existence of "self-consistent effect," i.e., the turn-on region of the parasitic n-p-n bipolar can change from one region to another region and increases with the stress current (ID). Furthermore, experimental data show that the minimum substrate potential to sustain a stable snapback phenomenon is 0.9 V and increases with ID instead of 0.6-0.8 V and independent of ID as reported in early literatures.

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Dynamic turn-on mechanism of the n-MOSFET under high-current stress

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