Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se 2 films

Kuo Chan Huang, Chien Lin Liu, Pin Kun Hung, Mau Phon Houng

研究成果: Article

15 引文 (Scopus)

摘要

In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se 2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se 2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se 2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se 2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ) 2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se 2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe 2 forms Cu(In,Al)Se 2 crystals.

原文English
頁(從 - 到)723-729
頁數7
期刊Applied Surface Science
273
DOIs
出版狀態Published - 2013 五月 15

指紋

Aluminum
Electrodeposition
Indium
Microstructure
Band structure
Diffraction patterns
Crystals
Surface morphology
Energy gap
X ray diffraction
Optical band gaps
Energy dispersive spectroscopy
Chemical reactions
Atoms
Scanning electron microscopy
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

引用此文

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title = "Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se 2 films",
abstract = "In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se 2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se 2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se 2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se 2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ) 2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se 2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe 2 forms Cu(In,Al)Se 2 crystals.",
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Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se 2 films . / Huang, Kuo Chan; Liu, Chien Lin; Hung, Pin Kun; Houng, Mau Phon.

於: Applied Surface Science, 卷 273, 15.05.2013, p. 723-729.

研究成果: Article

TY - JOUR

T1 - Effect of [Al] and [In] molar ratio in solutions on the growth and microstructure of electrodeposition Cu(In,Al)Se 2 films

AU - Huang, Kuo Chan

AU - Liu, Chien Lin

AU - Hung, Pin Kun

AU - Houng, Mau Phon

PY - 2013/5/15

Y1 - 2013/5/15

N2 - In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se 2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se 2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se 2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se 2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ) 2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se 2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe 2 forms Cu(In,Al)Se 2 crystals.

AB - In this paper, the cyclic voltammetric studies were used to realize the element's reduction potential and chemical reaction mechanism for presuming the formation routes of quaternary Cu(In,Al)Se 2 crystals. Thereafter, the prior adjustment of deposited potential from -0.6 V to -1.0 V can be identified a suitable potential as co-electrodeposition. The material characteristics of Cu(In,Al)Se 2 films are dominated by the percentage of aluminum content. Thus, the influence of aluminum and indium concentrations in solutions on the percentage composition, surface morphology, structural and crystal properties, and optical energy band gap of Cu(In,Al)Se 2 films were investigated. Energy dispersive X-ray spectroscopy (EDS) indicated that the ratio of Al to (Al + In) in Cu(In,Al)Se 2 films varied from 0.21 to 0.42 when adjusting aluminum and indium concentrations in solutions. Scanning electron microscopy (SEM) shows that the surface morphology changed from round-like structures into cauliflower-like structures and became rough when the aluminum concentration increased and indium concentration decreased in solutions. X-ray diffraction (XRD) patterns revealed three preferred growth orientations along the (1 1 2), (2 0 4/2 2 0), and (1 1 6/3 1 2) planes for all species. The (αhυ) 2 versus hυ plots (UV-Visible) shows that the optical energy band gap of the Cu(In,Al)Se 2 films can be successfully controlled from 1.17 eV to 1.48 eV by adjusting the aluminum and indium concentrations. Furthermore, the shift of the (1 1 2) peak in the XRD patterns and variation of optical band gap are evidence that the incorporation of aluminum atoms into the crystallitic CuInSe 2 forms Cu(In,Al)Se 2 crystals.

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