The electronic properties of GaInNAs/GaAs multiple-quantum-well (MQW) p-i-n photodetector with AlGaAs cladding layer have been studied. By applying a higher band gap Al0.3Ga0.7As to the photodetector, a substantial reduction in dark current was observed owing to an inherent difficulty for holes to surmount the high potential barrier between MQW and the cladding layer heterojunction under a reverse bias. The dark current obtained was as low as 4.1 pA at -3.5 V for a device with Al0.3Ga 0.7As cladding layer as compared to 22 μA also at -3.5 V for a similar device without the Al0.3Ga0.7As cladding layer. The photo/dark current contrast ratios obtained were 4.2×104 and 11, respectively, for devices with and without an Al0.3Ga 0.7As cladding layer at -3.5 V. In addition, peak responsivity of 1 mA/W was measured at around 1150 nm. Two orders of magnitude increase in the rejection ratio were realized between 1150 and 1250 nm at -2.0 V. The GaInNAs/GaAs MQW p-i-n photodetector was demonstrated with the AlGaAs cladding layer potentially providing a higher photo/dark current contrast ratio and higher responsivity rejection ratio.
|頁（從 - 到）||2136-2138|
|期刊||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版狀態||Published - 2008 十二月 1|
|事件||7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States|
持續時間: 2007 九月 16 → 2007 九月 21
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics