Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

I. Liang Chen, Wei Chou Hsu, Hao Chung Kuo, Chia Pin Sung, Chih Hung Chiou, Jin Mei Wang, Yu Hsiang Chang, Hsin Chieh Yu, Tsin Dong Lee

研究成果: Article同行評審

摘要

An emission wavelength record emission wavelength of 1245 nm in double InGaAs/GaAs quantum wells without a straincompensated barrier is obtained by metalorganic chemical vapor deposition (MOCVD). The effect of annealing on highly strained InGaAs quantum wells is analyzed using phtoluminanescence spectra. By comparing devices p-type distributed Bragg reflector (p-DBR) growth temperatures, the preliminary results indicate that a device with a low p-DBR growth temperature of 670°C exhibits a low threshold current and a high light output power. A threshold current of 6.7 mA in an InGaAs vertical-cavity surface emitting laser (VCSEL) in CW operation is realized with an emission spectrum up to 1.26 μm.

原文English
頁(從 - 到)770-773
頁數4
期刊Japanese Journal of Applied Physics
45
發行號2 A
DOIs
出版狀態Published - 2006 2月 8

All Science Journal Classification (ASJC) codes

  • 工程 (全部)
  • 物理與天文學 (全部)

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