Effect of annealing temperature and atmosphere on aluminum-doped ZnO/Au/aluminum-doped ZnO thin film properties

Chien Hsun Chu, Hung Wei Wu, Jow Lay Huang

研究成果: Article

9 引文 斯高帕斯(Scopus)

摘要

This study investigated the effect of different annealing conditions on the electrical properties of aluminum-doped ZnO/Au/aluminum-doped ZnO thin films. The thin films were prepared using rf magnetron sputtering (for AZO) and ion sputtering (for Au). They were then annealed in atmospheres of vacuum, nitrogen, and oxygen at temperatures ranging from 100 to 400 °C in steps of 100 °C for 3 min. Two critical parameters of the multilayer films were the Au layer thickness and annealing conditions (influence of the annealing temperature and atmosphere). High-quality multilayer films (with an 8-nm-thick Au layer) with a resistivity of 6.34 × 10- 5 Ω cm and a maximum optical transmittance of 92.3% were obtained upon annealing the films at 200 °C in vacuum. These parameter values indicate that the films are a potential candidate for high-quality electrodes in various displays.

原文English
頁(從 - 到)121-128
頁數8
期刊Thin Solid Films
605
DOIs
出版狀態Published - 2016 四月 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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