Effect of annealing temperature on the microstructure and photoluminescence of low resistivity Si/SiN/TaN thin films using magnetron sputtering

C. K. Chung, T. S. Chen, N. W. Chang, M. W. Liao, C. T. Lee

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A lot of studies have been devoted to the porous Si, erbium-doped Si and Si-embedded in dielectric matrix of SiO or SiN together with long-time conventional furnace annealing. Besides, it is noted that these Si nanostructured films were highly resistive and non-conducting. In this paper, we have investigated the effect of annealing temperature on the microstructure and photoluminescence of low-resistivity Si/SiN/TaN nanocomposite thin films which are deposited by magnetron sputtering and followed by rapid thermal annealing (RTA). All samples are of luminescence and staying low resistivity at about 1462-2162 μΩ cm which increases with increasing annealing temperatures. The asymmetric broad photoluminescence (PL) peak covered the wavelengths of 400-700 nm. The wide visible PL spectra can be deconvoluted into three bands of blue (∼ 455 nm), green-yellow (∼ 525 nm), and orange emissions (∼ 665 nm), which correspond to the emission origins from unsatisfied states in imperfections of interface between the Si:O and SiN:O, located states related to the mixed SiO or SiN bonds in SiN:O layer and nc-Si embedded in SiN:O matrix. The detailed mechanism of broad visible PL was investigated in terms of microstructure and bonding configuration evolution. The relationship between the annealing temperature, microstructure and PL behavior of Si/SiN/TaN multilayer films is discussed and established.

原文English
頁(從 - 到)1460-1463
頁數4
期刊Thin Solid Films
520
發行號5
DOIs
出版狀態Published - 2011 十二月 30

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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