TY - JOUR
T1 - Effect of Annealing Temperatures on Optical and Electrical Properties of TiO2/Mo Multilayer Films for Photosensor Applications
AU - Liu, Chi Fan
AU - Shi, Shih Chen
AU - Chen, Tao Hsing
AU - Guo, Guan Lin
N1 - Funding Information:
This paper was produced through Research Project MOST111-2628-E-992-001-MY2, which is supported by the National Science and Technology Council of Taiwan. The authors would like to express their gratitude to the National Science and Technology Council for its support, which enabled the smooth completion of this research.
Publisher Copyright:
© MYU K.K.
PY - 2022
Y1 - 2022
N2 - In this study, titanium dioxide (TiO2) and molybdenum (Mo) with a purity of 99.99% were deposited on a glass substrate under various parameters through RF magnetron sputtering to form TiO2/Mo bilayer and TiO2/Mo/TiO2 multilayer transparent conductive thin films. In addition, the films were annealed in vacuum at various temperatures to adjust their internal crystallization through thermal energy such that they exhibited replacement characteristics and fewer internal defects. After the bilayer films with a Mo-doped metal layer and the TiO2/Mo/ TiO2 multilayer films were annealed, the thickness, electrical properties, optical properties, surface structure, and figure of merit (FOM) of the thin films were examined. The results indicated that the TiO2/Mo bilayer films had a low resistivity of 1.97 × 10−1 Ω-cm before annealing and an average transmittance rate of 66.59%; the unannealed TiO2/Mo/TiO2 multilayer films had a resistivity of 7.21 × 10−3 Ω-cm and an average transmittance rate of 69.34%. The optical transmittance of both structures tended to increase with their annealing temperature, and an optimal light transmittance rate of 77% was achieved. For the FOM, the optimal values of the bilayer and multilayer structures were 5.96 × 10−7 and 4.46 × 10−5 Ω−1, respectively. The results indicate that TiO2/Mo/TiO2 thin films are suitable for photosensor applications.
AB - In this study, titanium dioxide (TiO2) and molybdenum (Mo) with a purity of 99.99% were deposited on a glass substrate under various parameters through RF magnetron sputtering to form TiO2/Mo bilayer and TiO2/Mo/TiO2 multilayer transparent conductive thin films. In addition, the films were annealed in vacuum at various temperatures to adjust their internal crystallization through thermal energy such that they exhibited replacement characteristics and fewer internal defects. After the bilayer films with a Mo-doped metal layer and the TiO2/Mo/ TiO2 multilayer films were annealed, the thickness, electrical properties, optical properties, surface structure, and figure of merit (FOM) of the thin films were examined. The results indicated that the TiO2/Mo bilayer films had a low resistivity of 1.97 × 10−1 Ω-cm before annealing and an average transmittance rate of 66.59%; the unannealed TiO2/Mo/TiO2 multilayer films had a resistivity of 7.21 × 10−3 Ω-cm and an average transmittance rate of 69.34%. The optical transmittance of both structures tended to increase with their annealing temperature, and an optimal light transmittance rate of 77% was achieved. For the FOM, the optimal values of the bilayer and multilayer structures were 5.96 × 10−7 and 4.46 × 10−5 Ω−1, respectively. The results indicate that TiO2/Mo/TiO2 thin films are suitable for photosensor applications.
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U2 - 10.18494/SAM4133
DO - 10.18494/SAM4133
M3 - Article
AN - SCOPUS:85142813315
SN - 0914-4935
VL - 34
SP - 4127
EP - 4136
JO - Sensors and Materials
JF - Sensors and Materials
IS - 11
ER -