TY - JOUR
T1 - Effect of annealing treatments on the microstructure of (Zr 0.8Sn0.2)TiO4 thin films sputtered on silicon
AU - Hsu, Cheng Hsing
AU - Huang, Cheng Liang
N1 - Funding Information:
This work was supported by the National Science Council of the Republic of China under grant NSC94-2218-E-239-001.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O 2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr 0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.
AB - This paper describes physical properties of Zirconium Tin Titanium Oxide doped 1 wt.% ZnO thin films on n-type Si substrate were deposited by rf magnetron sputtering at a fix rf power of 300 W, a deposition pressure of 5 mTorr, a substrate temperature of 450 °C and a argon-oxygen (Ar/O 2) of 100/0. Particular attention will be paid to the effects of an annealing treatment in air ambient on the physical properties. The films were annealed at various temperatures from 500 °C to 700 °C and also changed annealing times from 2 h to 6 h. The powder target composition of (Zr 0.8Sn0.2)TiO4 was synthesized in the experiment. The annealed films were characterized using X-ray diffraction (XRD). The surface morphologies of annealed film were examined by atomic force microscopy and scanning electron microscopy.
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U2 - 10.1016/j.tsf.2005.07.202
DO - 10.1016/j.tsf.2005.07.202
M3 - Conference article
AN - SCOPUS:30944465876
SN - 0040-6090
VL - 498
SP - 271
EP - 276
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Y2 - 12 November 2004 through 14 November 2004
ER -