Effect of arsenic implantation dose on p-type ZnO films obtained via thermal diffusion from silicon substrates

Yi Jen Huang, Meng Fu Shih, Chun Chu Liu, Sheng-Yuan Chu, Kuang-Yao Lo

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Arsenic (As)-doped ZnO films were obtained via thermal diffusion from low energy high dose implanted silicon substrates using thermal treatment. The implantation conditions, such as implantation dose and energy, were adjusted to allow more nonactivated dopants in the surface region of the substrate and to outdiffuse into ZnO films efficiently. With the proper implantation dose and energy, the ZnO films exhibited p-type conduction, which increased the hole concentration and preservation time in the air ambient. The maximum carrier concentration of the As-doped ZnO films was 8.06× 1018 cm -3, and the resistivity reached 1.63× 10-1 cm.

原文English
期刊Electrochemical and Solid-State Letters
13
發行號11
DOIs
出版狀態Published - 2010 九月 20

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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