Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

J. J. Wu; K. H. Chen; C. Y. Wen; L. C. Chen; X. J. Guo; H. J. Lo; S. T. Lin; Y. C. Yu; C. W. Wang; E. K. Lin

doi:10.1016/S0925-9635(99)00218-6

Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

J. J. Wu, K. H. Chen, C. Y. Wen, L. C. Chen, X. J. Guo, H. J. Lo, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin

化學工程學系

研究成果: Conference article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH₄, C₂H₂ and CH₃NH₂ were examined with and without H₂ addition during growth. The results indicated that SiCN films were deposited successfully using CH₄ with H₂ addition as well as using CH₃NH₂ both with and without H₂ addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C₂H₂ as the source gas regardless of H₂ addition during growth. Among the three source gas studied, CH₃NH₂ was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.

原文	English
頁（從 - 到）	556-561
頁數	6
期刊	Diamond and Related Materials
卷	9
發行號	3-6
DOIs	https://doi.org/10.1016/S0925-9635(99)00218-6
出版狀態	Published - 2000 四月
事件	10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic 持續時間: 1999 九月 12 → 1999 九月 17

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(99)00218-6

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title = "Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor",

abstract = "The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.",

author = "Wu, {J. J.} and Chen, {K. H.} and Wen, {C. Y.} and Chen, {L. C.} and Guo, {X. J.} and Lo, {H. J.} and Lin, {S. T.} and Yu, {Y. C.} and Wang, {C. W.} and Lin, {E. K.}",

note = "Funding Information: Financial support for this project from National Science Council, Taiwan, under contract no. NSC-88-2113-M-001-021 and NSC-88-2112-M-002-022 is gratefully acknowledged.; 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide ; Conference date: 12-09-1999 Through 17-09-1999",

year = "2000",

month = apr,

doi = "10.1016/S0925-9635(99)00218-6",

language = "English",

volume = "9",

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Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor. / Wu, J. J.; Chen, K. H.; Wen, C. Y.; Chen, L. C.; Guo, X. J.; Lo, H. J.; Lin, S. T.; Yu, Y. C.; Wang, C. W.; Lin, E. K.

於: Diamond and Related Materials, 卷 9, 編號 3-6, 04.2000, p. 556-561.

研究成果: Conference article › 同行評審

TY - JOUR

T1 - Effect of carbon sources on silicon carbon nitride films growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

AU - Wu, J. J.

AU - Chen, K. H.

AU - Wen, C. Y.

AU - Chen, L. C.

AU - Guo, X. J.

AU - Lo, H. J.

AU - Lin, S. T.

AU - Yu, Y. C.

AU - Wang, C. W.

AU - Lin, E. K.

N1 - Funding Information: Financial support for this project from National Science Council, Taiwan, under contract no. NSC-88-2113-M-001-021 and NSC-88-2112-M-002-022 is gratefully acknowledged.

PY - 2000/4

Y1 - 2000/4

N2 - The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.

AB - The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.

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DO - 10.1016/S0925-9635(99)00218-6

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VL - 9

SP - 556

EP - 561

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-6

T2 - 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide

Y2 - 12 September 1999 through 17 September 1999

ER -