摘要
The effect of carbon source on SiCN film growth was studied in an electron cyclotron resonance plasma chemical vapor deposition reactor. The growth characteristics of CH4, C2H2 and CH3NH2 were examined with and without H2 addition during growth. The results indicated that SiCN films were deposited successfully using CH4 with H2 addition as well as using CH3NH2 both with and without H2 addition. (Si; C) and N composition ratios of the films thus deposited were around 0.75. Carbon was hardly incorporated into the films when deposited using C2H2 as the source gas regardless of H2 addition during growth. Among the three source gas studied, CH3NH2 was the most effective for the SiCN films growth. Spectroscopic study of the gas phase species during growth and discussion on the growth phenomena are presented in this paper. (C) 2000 Elsevier Science S.A. All rights reserved.
原文 | English |
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頁(從 - 到) | 556-561 |
頁數 | 6 |
期刊 | Diamond and Related Materials |
卷 | 9 |
發行號 | 3-6 |
DOIs | |
出版狀態 | Published - 2000 4月 |
事件 | 10th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide - Prague, Czech Republic 持續時間: 1999 9月 12 → 1999 9月 17 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 一般化學
- 機械工業
- 材料化學
- 電氣與電子工程
- 一般物理與天文學