Effect of crystallinity and preferred orientation of Ta2N films on diffusion barrier properties for copper metallization

Hung Chin Chung, Chuan Pu Liu

研究成果: Article

31 引文 斯高帕斯(Scopus)

摘要

Tantalum nitride (Ta2N) films deposited at various substrate temperatures onto silicon (001) substrates can produce amorphous and crystalline phase with different preferred orientations. Subsequently, the viability of employing them as the diffusion barriers between copper and silicon is investigated by annealing at various temperatures for 30 min. The characterization of the thin films was carried out by four-point probe and X-ray diffraction. The results indicate that the thermal stability of Ta2N with Cu and Si are dependent on the crystallinity of Ta2N. Ta2N phase with the highest (002) preferred orientation exhibits the highest structural stability to prevent copper diffusion more effectively.

原文English
頁(從 - 到)3122-3126
頁數5
期刊Surface and Coatings Technology
200
發行號10 SPEC. ISS.
DOIs
出版狀態Published - 2006 二月 24

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

指紋 深入研究「Effect of crystallinity and preferred orientation of Ta<sub>2</sub>N films on diffusion barrier properties for copper metallization」主題。共同形成了獨特的指紋。

  • 引用此