Effect of Cu drift on dielectric breakdown for porous low dielectric constant film under static and dynamic stress

Yi Lung Cheng, Yao Liang Huang, Chung Ren Sun, Wen Hsi Lee, Giin Shan Chen, Jau Shiung Fang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Cu-ion-migration-induced the porous low-k dielectric breakdown was studied in alternating polarity-bias conditions using a metal-insulator-metal (MIM) structure with Cu as a top electrode. The experimental results indicated that Cu ions migrate into a dielectric film under a positive polarity stress, leading to a shorter time to failure (TTF). Additionally, the TTF obtained in the alternating-polarity test increased with decreasing the stressing frequency, indicating that the backward migration of Cu ions during the reverse-bias stress. When the frequency is decreased to 10-2 Hz, the measured TTFs were higher as compared to a direct-current (DC) stress condition. Under Cu-ion-recovery case, the electric-field acceleration factor for porous low-k dielectric film breakdown tends to increase. Meanwhile, this Cu backward migration effect is effective as the stressing time in the negative polarity is larger than 0.1 s.

原文English
主出版物標題Dielectrics for Nanosystems 7
主出版物子標題Materials Science, Processing, Reliability, and Manufacturing
編輯Y. S. Obeng, H. Iwai, Z. Chen, D. Bauza, K. B. Sundaram, T. Chikyow, D. Misra
發行者Electrochemical Society Inc.
頁面241-252
頁數12
版本2
ISBN(電子)9781607685395
DOIs
出版狀態Published - 2016 一月 1
事件Symposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting - San Diego, United States
持續時間: 2016 五月 292016 六月 2

出版系列

名字ECS Transactions
號碼2
72
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherSymposium on Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing - 229th ECS Meeting
國家United States
城市San Diego
期間16-05-2916-06-02

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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