@inproceedings{0392f305c84348b68a6c65862dc5ec46,
title = "Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering",
abstract = "Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×105 at 10 V applied bias with 280 nm illumination.",
author = "Tung, {Wan Ju} and Yang, {Chen Chuan} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Chiu, {Cheng Hao} and Lin, {Chih Hung} and Cheng, {Tien Hung} and Chang, {Shoou Jinn}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394647",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
}