Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering

Wan Ju Tung, Chen Chuan Yang, Sheng Po Chang, Ming Hung Hsu, Cheng Hao Chiu, Chih Hung Lin, Tien Hung Cheng, Shoou Jinn Chang

研究成果: Conference contribution

摘要

Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×10 5 at 10 V applied bias with 280 nm illumination.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 2018 六月 22
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 2018 五月 72018 五月 9

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
國家Taiwan
城市Taipei
期間18-05-0718-05-09

指紋

Photodetectors
Partial pressure
Sputtering
partial pressure
photometers
sputtering
Metals
Zinc Oxide
Quartz
Dark currents
dark current
Zinc oxide
rejection
zinc oxides
Magnetron sputtering
metals
gas flow
Flow of gases
radio frequencies
magnetron sputtering

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

引用此文

Tung, W. J., Yang, C. C., Chang, S. P., Hsu, M. H., Chiu, C. H., Lin, C. H., ... Chang, S. J. (2018). Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018 (頁 1-2). (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2018.8394647
Tung, Wan Ju ; Yang, Chen Chuan ; Chang, Sheng Po ; Hsu, Ming Hung ; Chiu, Cheng Hao ; Lin, Chih Hung ; Cheng, Tien Hung ; Chang, Shoou Jinn. / Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 頁 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).
@inproceedings{0392f305c84348b68a6c65862dc5ec46,
title = "Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering",
abstract = "Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×10 5 at 10 V applied bias with 280 nm illumination.",
author = "Tung, {Wan Ju} and Yang, {Chen Chuan} and Chang, {Sheng Po} and Hsu, {Ming Hung} and Chiu, {Cheng Hao} and Lin, {Chih Hung} and Cheng, {Tien Hung} and Chang, {Shoou Jinn}",
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Tung, WJ, Yang, CC, Chang, SP, Hsu, MH, Chiu, CH, Lin, CH, Cheng, TH & Chang, SJ 2018, Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018, Institute of Electrical and Electronics Engineers Inc., 頁 1-2, 7th International Symposium on Next-Generation Electronics, ISNE 2018, Taipei, Taiwan, 18-05-07. https://doi.org/10.1109/ISNE.2018.8394647

Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering. / Tung, Wan Ju; Yang, Chen Chuan; Chang, Sheng Po; Hsu, Ming Hung; Chiu, Cheng Hao; Lin, Chih Hung; Cheng, Tien Hung; Chang, Shoou Jinn.

Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018).

研究成果: Conference contribution

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T1 - Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering

AU - Tung, Wan Ju

AU - Yang, Chen Chuan

AU - Chang, Sheng Po

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N2 - Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×10 5 at 10 V applied bias with 280 nm illumination.

AB - Ga-doped zinc oxide metal-semiconductor-metal ultraviolet photodetectors were fabricated by radio frequency magnetron sputtering on quartz substrates. The films' Ga content were relatively high to enlarge the bandgap and obtain low dark current. In addition, it was found that the devices' performance was significantly improved by proper gas flow ratios of O2/Ar during deposition. The responsivity and UV-to-visible rejection ratio of photodetector were 16.08 A/W and 5.44×10 5 at 10 V applied bias with 280 nm illumination.

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Tung WJ, Yang CC, Chang SP, Hsu MH, Chiu CH, Lin CH 等. Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering. 於 Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018). https://doi.org/10.1109/ISNE.2018.8394647