Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition

Mu Gong Tsai, Chia Chuan Chen, You Jyun Chen, In Gann Chen, Xiaoding Qi, Jung Chun Huang, Cen Ying Lin, Chung Wei Cheng

研究成果: Conference contribution

摘要

Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

原文English
主出版物標題Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
編輯Stephan Roth, Xianfan Xu, Yoshiki Nakata, Beat Neuenschwander
發行者SPIE
ISBN(電子)9781628414400
DOIs
出版狀態Published - 2015 一月 1
事件Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX - San Francisco, United States
持續時間: 2015 二月 92015 二月 12

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
9350
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Other

OtherLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX
國家United States
城市San Francisco
期間15-02-0915-02-12

指紋

Pulsed Laser Deposition
Femtosecond
Pulsed laser deposition
pulsed laser deposition
Thin Films
Gallium
Indium
Femtosecond Laser
Selenium
Thin films
selenium
Copper
Laser
gallium
indium
thin films
Lasers
lasers
copper
Target

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

引用此文

Tsai, M. G., Chen, C. C., Chen, Y. J., Chen, I. G., Qi, X., Huang, J. C., ... Cheng, C. W. (2015). Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. 於 S. Roth, X. Xu, Y. Nakata, & B. Neuenschwander (編輯), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX [935019] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9350). SPIE. https://doi.org/10.1117/12.2076554
Tsai, Mu Gong ; Chen, Chia Chuan ; Chen, You Jyun ; Chen, In Gann ; Qi, Xiaoding ; Huang, Jung Chun ; Lin, Cen Ying ; Cheng, Chung Wei. / Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. 編輯 / Stephan Roth ; Xianfan Xu ; Yoshiki Nakata ; Beat Neuenschwander. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.",
author = "Tsai, {Mu Gong} and Chen, {Chia Chuan} and Chen, {You Jyun} and Chen, {In Gann} and Xiaoding Qi and Huang, {Jung Chun} and Lin, {Cen Ying} and Cheng, {Chung Wei}",
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Tsai, MG, Chen, CC, Chen, YJ, Chen, IG, Qi, X, Huang, JC, Lin, CY & Cheng, CW 2015, Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. 於 S Roth, X Xu, Y Nakata & B Neuenschwander (編輯), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX., 935019, Proceedings of SPIE - The International Society for Optical Engineering, 卷 9350, SPIE, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX, San Francisco, United States, 15-02-09. https://doi.org/10.1117/12.2076554

Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. / Tsai, Mu Gong; Chen, Chia Chuan; Chen, You Jyun; Chen, In Gann; Qi, Xiaoding; Huang, Jung Chun; Lin, Cen Ying; Cheng, Chung Wei.

Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. 編輯 / Stephan Roth; Xianfan Xu; Yoshiki Nakata; Beat Neuenschwander. SPIE, 2015. 935019 (Proceedings of SPIE - The International Society for Optical Engineering; 卷 9350).

研究成果: Conference contribution

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AU - Tsai, Mu Gong

AU - Chen, Chia Chuan

AU - Chen, You Jyun

AU - Chen, In Gann

AU - Qi, Xiaoding

AU - Huang, Jung Chun

AU - Lin, Cen Ying

AU - Cheng, Chung Wei

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

AB - Two kinds of pulsed laser sources, femtosecond laser (fs laser) and nanosecond laser (ns laser), were used in the pulsed laser deposition (PLD) system to synthesize copper indium gallium selenium (CIGS) thin films at the substrate temperature from room temperature (RT) and 500°C. Different surface morphology, crystallinity, and stoichiometric ratio were observed on CIGS thin films deposited by femtosecond pulsed laser deposition (fs-PLD) and nanosecond pulsed laser deposition (ns-PLD) respectively, that resulted in different optical and electrical properties. It is proposed that the laser absorption of CIGS target with different laser wavelength caused the difference in laser penetration depths into the target, so that the stoichiometric ratio of the evaporated materials splashing from the target were different between fs-PLD and ns-PLD processes.

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Tsai MG, Chen CC, Chen YJ, Chen IG, Qi X, Huang JC 等. Effect of different properties of Cu(In1-xGax)Se2 thin films synthesized by femtosecond and nanosecond pulsed laser deposition. 於 Roth S, Xu X, Nakata Y, Neuenschwander B, 編輯, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XX. SPIE. 2015. 935019. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2076554