Effect of divalent dopants on defect structure and electrical properties of Bi₂WO₆

Engineering & Materials Science

• Defect structures 100%
• Oxygen vacancies 97%
• Doping (additives) 70%
• Electric properties 67%
• Solid solutions 47%
• Scanning electron microscopy 33%
• Solid state reactions 32%
• Ionic conductivity 31%
• Positive ions 26%
• Dissolution 22%
• Atoms 21%
• Raw materials 19%
• Ions 19%
• Oxides 18%
• Temperature 16%

Chemical Compounds

• Crystal Defect 74%
• Tetragonal Space Group 55%
• Doping Material 55%
• Electrical Property 53%
• Dioxygen 30%
• Solid Solution 26%
• Conductivity 21%
• Ionic Conductivity 14%
• Solid State Reaction 14%
• Raw Material 13%
• Oxygen Atom 12%
• Dissolution 11%
• Oxide 8%
• Mixture 6%
• Ion 6%

Physics & Astronomy

• electrical properties 46%
• oxygen 38%
• defects 35%
• solid solutions 25%
• conductivity 20%
• scanning electron microscopy 20%
• oxygen atoms 16%
• ion currents 16%
• sublattices 15%
• ambient temperature 15%
• dissolving 14%
• cations 13%
• conductors 12%
• substitutes 12%
• solid state 11%
• oxides 9%
• probes 9%
• ions 7%