Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests

Yu Wei Lin, Mei Chen Su, Wei Hsiang Huang, Ying Ta Chiu, Te Ping Shih, Kwang Lung Lin

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

Ag alloy wire of high Ag content showed the lower cost and resistivity than the 88%Ag, 95%Ag and 96%Ag alloy wires. In this study, the Au, In, Ni and Cu elements were doped in Ag-2.0%Pd alloy to form the ternary Ag-Pd-Au, Ag-Pd-In, and quaternary Ag-Pd-Au-Ni, Ag-Pd-Au-Cu alloy wires. The interfacial reactions of the Ag alloy wires were investigated after HTST and TCT reliability tests. These tests show that Ag-Pd-In and Ag-Pd-Au-Ni alloy wires exhibit excellent reliability performance. The high Ag content Ag2Al and Ag3Al IMCs trend to form at the Ag-Pd-In/Al, Ag-Pd-Au-Ni/Al and Ag-Pd-Au-Cu/Al interfaces after prolonged HTST test for 2000 h. However, the Ag3Al2 compound is formed at the Ag-Pd-Au/Al interface after HTST test for 2000 h. The elemental dopant can diffuse from Ag alloy wire to the interface and dissolved in the intermetallic compound after prolonged tests. The interface of failed Ag-Pd-Au-Cu and Ag-Pd-Au ball bonds showed the formation of cracks at the Ag ball bonds/Ag3Al2 IMCs interfaces. The crack may be the path for the diffusion of chloride ion and sulfate ion from the molding compound to cause the interfacial oxidation.

原文English
主出版物標題Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面613-619
頁數7
ISBN(電子)9781509043682
DOIs
出版狀態Published - 2017 二月 21
事件18th IEEE Electronics Packaging Technology Conference, EPTC 2016 - Singapore, Singapore
持續時間: 2016 十一月 302016 十二月 3

出版系列

名字Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016

Other

Other18th IEEE Electronics Packaging Technology Conference, EPTC 2016
國家Singapore
城市Singapore
期間16-11-3016-12-03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

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  • 引用此

    Lin, Y. W., Su, M. C., Huang, W. H., Chiu, Y. T., Shih, T. P., & Lin, K. L. (2017). Effect of doping element on the interfacial reaction behavior of Ag alloy wires bonding on Al pad after HTST and TCT tests. 於 Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016 (頁 613-619). [7861553] (Proceedings of the 2016 IEEE 18th Electronics Packaging Technology Conference, EPTC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2016.7861553