Effect of electric potential and mechanical force on copper electro-chemical mechanical planarization

Sheng Wen Chen, Te Ming Kung, Chuan Pu Liu, Shih Chieh Chang, Yi Lung Cheng, Ying Lang Wang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this study, the dependence of Cu electrochemical mechanical planarization (ECMP) rate on electric potential and mechanical force in electrolyte is investigated using potentiodynamic analysis, electrochemical impedance spectroscopy (EIS), and X-ray photoelectron spectroscopy (XPS). In chemical etching, CMP, electropolishing, and ECMP processes, the Cu removal rate is mainly affected by the interplay between electric potential and mechanical force. An equivalent circuit is built by fitting the EIS results to explain the behavior of Cu dissolution and Cu passive film. The Cu dissolution rate increased with decreasing charge-transfer time-delay. The resistance of the Cu passive film (R p) is proportional to the intensity ratio of Cu 2O=[Cu(OH) 2 + CuO].

原文English
文章編號036504
期刊Japanese journal of applied physics
51
發行號3 PART 1
DOIs
出版狀態Published - 2012 三月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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