Metal-insulator-silicon solar cells with an insulator layer fabricated by the liquid phase deposition method, denoted as LPD-MIS solar cells, were studied. Under the illumination, an output efficiency up to 7.2% was obtained. A photovoltaic phenomenon occurred even for an oxide thickness ranging from 50 to 150 angstroms, which was much thicker than the limit of 30 angstroms predicted by MIS theory. It was suggested that these interesting results may be due to barrier height enhancement and diode quality factor lowering caused by a fluorine content incorporated in the SiO2 layer during the LPD-MIS solar cell fabrication process. The existence of fluorine content and its effect on LPD-MIS solar cell performances were investigated through AES, FTIR, and C-V characterizations. The hopping conduction mechanism was proposed to explain the effect of the oxide traps, which were believed to be due to the fluorine incorporated in the LPD-SiO2 film. The results provided a guideline for the fabrication of LPD-SiO2 related devices and showed that an extreme thin insulating layer in LPD-MIS solar cell was not a necessity.
All Science Journal Classification (ASJC) codes