Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

Kuei Yi Chu, Shiou Ying Cheng, Meng Hsueh Chiang, Yi Jung Liu, Chien Chang Huang, Tai You Chen, Chi Shiang Hsu, Wen Chau Liu, Wen Yu Cheng, Bin Cian Lin

研究成果: Article同行評審

摘要

The characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with different graded triple delta-doped sheets are investigated and experimentally demonstrated. Based on a two-dimensional simulator of ATLAS, the band diagrams, electron densities and DC characteristics of studied devices are comprehensively analyzed. Due to the use of properly graded triple delta-doped sheets, good pinch-off and saturation characteristics, improved transport properties and wide current swing are obtained. For comparison, a practical DCPHEMT with good device performances is fabricated as well. It is found that the simulated data are in good agreement with experimental results.

原文English
頁(從 - 到)289-295
頁數7
期刊Superlattices and Microstructures
50
發行號4
DOIs
出版狀態Published - 2011 十月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程

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