Effect of growth temperature on the indium incorporation in ingan epitaxial films

P. C. Chang, C. L. Yu, Y. W. Jahn, S. J. Chang, K. H. Lee

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

InxGa1-xN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures between 740°C to 830°C. The thickness of InGaN film is 50nm for all samples. The incorporation of indium is found to increase with decreasing grown temperature. The optical properties and film quality of the samples have been investigated by photoluminescence (PL) system and X-ray diffraction (XRD). The Full Width at Half Maximum (FWHM) of PL and XRD decreases with increasing the grown temperature. We also found that the peak emission of PL shifts with changing the grown temperature. The effect of temperature on the film properties was determined. This understanding will lead to better quality control of the optoelectronic devices.

原文English
主出版物標題Applications of Engineering Materials
頁面1456-1459
頁數4
DOIs
出版狀態Published - 2011 八月 12
事件2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011 - Sanya, China
持續時間: 2011 七月 292011 七月 31

出版系列

名字Advanced Materials Research
287-290
ISSN(列印)1022-6680

Other

Other2011 International Conference on Advanced Engineering Materials and Technology, AEMT 2011
國家China
城市Sanya
期間11-07-2911-07-31

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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